Project Specification table
Sensing type Through beam reflection
Minimum detection Opaque object Φ3.0×0.8mm
Tandard target Opaque objectΦ5.0×0.8mm or more
Zero sensitivity adjustment Yes
Light source 940nm infrared modulated light
Hysteresis<15% Scanning distance
Operating Voltage 12~24VDC±10% impulse (P-P)10%
Current consumption <20mA
Load current 100mA
Leakage current <0.01mANoLoad
Residual voltage <1.5VDC(Loadcurrent50mA,wire2M)
Repeatability<1% Scanning distance
Response frequency 300HZ
Reverse polarity protectiom Yes
Short circuit protection NO
Output type NPN.NO/NPN.NC PNP.NO/PNP.NC
Response time 0.5ms
Insulation resistance >20MΩ(Between the charging part and the outer casing)
Dielectric strength 1000VDC 50~60Hz 1min(Between the charging part and the outer casing)
Ambient temperature -10~50℃(Withou icing or condensation )
Ambient humidity 35~85% Relative humidtuy
Ambien illumination Sunlight:2,000LX , Light:1,000LX
Storage temperature -20~60℃(Withou icing or condensation )
Storage humidity 35~95% HR Relative humidtuy
Protection degree IP54
Connection Φ4x2M/2-wires Φ4x2M/3-wires Φ4 Lead 150mm with M8 connector
Material PBT+PC
Weight Approx:45.5g/46g/46.5g/47.5g/55g/60g/86g/87g
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